Tetravalent Doping of CeO2: The Impact of Valence Electron Character on Group IV Dopant Influence

D. E. P. Vanpoucke; S. Cottenier; V. Van Speybroeck; I. Van Driessche; P. Bultinck

doi:10.1111/jace.12650

Tetravalent Doping of CeO2: The Impact of Valence Electron Character on Group IV Dopant Influence

D. E. P. Vanpoucke^*, S. Cottenier, V. Van Speybroeck, I. Van Driessche, P. Bultinck

^*Corresponding author for this work

Research output: Contribution to journal › Article › Academic › peer-review

Original language	English
Pages (from-to)	258-266
Number of pages	9
Journal	Journal of the American Ceramic Society
Volume	97
Issue number	1
DOIs	https://doi.org/10.1111/jace.12650
Publication status	Published - Jan 2014

Keywords

EXTENDING HIRSHFELD-I
BUFFER LAYERS
NANOSIZED CEO2-SIO2
CRYSTAL-STRUCTURES
CATALYSTS
CERIA
OXIDES
BEHAVIOR
GAS
GD

Access to Document

10.1111/jace.12650

Cite this

Vanpoucke, D. E. P., Cottenier, S., Van Speybroeck, V., Van Driessche, I., & Bultinck, P. (2014). Tetravalent Doping of CeO2: The Impact of Valence Electron Character on Group IV Dopant Influence. Journal of the American Ceramic Society, 97(1), 258-266. https://doi.org/10.1111/jace.12650

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keywords = "EXTENDING HIRSHFELD-I, BUFFER LAYERS, NANOSIZED CEO2-SIO2, CRYSTAL-STRUCTURES, CATALYSTS, CERIA, OXIDES, BEHAVIOR, GAS, GD",

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