Reduction of efficiency droop in GaN/InGaN based multiple quantum well light emitting diode by varying Si-doping and thickness in barrier layers

Shivesh Anand, Pramila Mahala*, Sumitra Singh, Suchandan Pal

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

Original languageEnglish
Pages (from-to)645-649
Number of pages5
JournalOptik
Volume178
DOIs
Publication statusPublished - 2019

Keywords

  • Barrier doping
  • InGaN/GaN
  • Internal quantum efficiency (IQE)
  • Light emitting diodes (LEDs)
  • Multiple quantum well (MQW)

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