Reduction of efficiency droop in GaN/InGaN based multiple quantum well light emitting diode by varying Si-doping and thickness in barrier layers

Shivesh Anand; Pramila Mahala; Sumitra Singh; Suchandan Pal

doi:10.1016/j.ijleo.2018.09.151

Reduction of efficiency droop in GaN/InGaN based multiple quantum well light emitting diode by varying Si-doping and thickness in barrier layers

Shivesh Anand, Pramila Mahala^*, Sumitra Singh, Suchandan Pal

^*Corresponding author for this work

Research output: Contribution to journal › Article › Academic › peer-review

Abstract

In this paper, InGaN/GaN based multiple quantum well blue light emitting diodes have been optimized by varying Si doping concentrations and incorporating step-wise graded thickness in quantum barriers for achieving improved internal quantum efficiency. Optimized Si-doped barrier profile along with graded thickness in quantum barriers shows improved performance of light emitting diodes. The improvement in results may be attributed to the fact that grading made the transportation of holes more homogeneous, which inhibits the electron leakage and enhances the radiative recombination.

Original language	English
Pages (from-to)	645-649
Number of pages	5
Journal	Optik
Volume	178
DOIs	https://doi.org/10.1016/j.ijleo.2018.09.151
Publication status	Published - 2019

Keywords

Barrier doping
InGaN/GaN
Internal quantum efficiency (IQE)
Light emitting diodes (LEDs)
Multiple quantum well (MQW)

Access to Document

10.1016/j.ijleo.2018.09.151

Cite this

@article{7655b663a48d455fbc2298a8db45be87,

title = "Reduction of efficiency droop in GaN/InGaN based multiple quantum well light emitting diode by varying Si-doping and thickness in barrier layers",

abstract = "In this paper, InGaN/GaN based multiple quantum well blue light emitting diodes have been optimized by varying Si doping concentrations and incorporating step-wise graded thickness in quantum barriers for achieving improved internal quantum efficiency. Optimized Si-doped barrier profile along with graded thickness in quantum barriers shows improved performance of light emitting diodes. The improvement in results may be attributed to the fact that grading made the transportation of holes more homogeneous, which inhibits the electron leakage and enhances the radiative recombination.",

keywords = "Barrier doping, InGaN/GaN, Internal quantum efficiency (IQE), Light emitting diodes (LEDs), Multiple quantum well (MQW)",

author = "Shivesh Anand and Pramila Mahala and Sumitra Singh and Suchandan Pal",

note = "Funding Information: Authors gratefully acknowledge Director, CEERI, Pilani for his encouragement in this work. Authors also acknowledge all “Opto-electronic and MOEMS Group” and “Flexible and Non-Silicon Electronics Group” members for their help and cooperation. One of the authors (Pramila Mahala) gratefully acknowledges SERB-National Postdoctoral Fellowship ( PDF/2017/002648 ) for funding. Publisher Copyright: {\textcopyright} 2018",

year = "2019",

doi = "10.1016/j.ijleo.2018.09.151",

language = "English",

volume = "178",

pages = "645--649",

journal = "Optik",

issn = "0030-4026",

publisher = "Elsevier GmbH",

}

TY - JOUR

T1 - Reduction of efficiency droop in GaN/InGaN based multiple quantum well light emitting diode by varying Si-doping and thickness in barrier layers

AU - Anand, Shivesh

AU - Mahala, Pramila

AU - Singh, Sumitra

AU - Pal, Suchandan

N1 - Funding Information: Authors gratefully acknowledge Director, CEERI, Pilani for his encouragement in this work. Authors also acknowledge all “Opto-electronic and MOEMS Group” and “Flexible and Non-Silicon Electronics Group” members for their help and cooperation. One of the authors (Pramila Mahala) gratefully acknowledges SERB-National Postdoctoral Fellowship ( PDF/2017/002648 ) for funding. Publisher Copyright: © 2018

PY - 2019

Y1 - 2019

N2 - In this paper, InGaN/GaN based multiple quantum well blue light emitting diodes have been optimized by varying Si doping concentrations and incorporating step-wise graded thickness in quantum barriers for achieving improved internal quantum efficiency. Optimized Si-doped barrier profile along with graded thickness in quantum barriers shows improved performance of light emitting diodes. The improvement in results may be attributed to the fact that grading made the transportation of holes more homogeneous, which inhibits the electron leakage and enhances the radiative recombination.

AB - In this paper, InGaN/GaN based multiple quantum well blue light emitting diodes have been optimized by varying Si doping concentrations and incorporating step-wise graded thickness in quantum barriers for achieving improved internal quantum efficiency. Optimized Si-doped barrier profile along with graded thickness in quantum barriers shows improved performance of light emitting diodes. The improvement in results may be attributed to the fact that grading made the transportation of holes more homogeneous, which inhibits the electron leakage and enhances the radiative recombination.

KW - Barrier doping

KW - InGaN/GaN

KW - Internal quantum efficiency (IQE)

KW - Light emitting diodes (LEDs)

KW - Multiple quantum well (MQW)

U2 - 10.1016/j.ijleo.2018.09.151

DO - 10.1016/j.ijleo.2018.09.151

M3 - Article

SN - 0030-4026

VL - 178

SP - 645

EP - 649

JO - Optik

JF - Optik

ER -