In this paper, InGaN/GaN based multiple quantum well blue light emitting diodes have been optimized by varying Si doping concentrations and incorporating step-wise graded thickness in quantum barriers for achieving improved internal quantum efficiency. Optimized Si-doped barrier profile along with graded thickness in quantum barriers shows improved performance of light emitting diodes. The improvement in results may be attributed to the fact that grading made the transportation of holes more homogeneous, which inhibits the electron leakage and enhances the radiative recombination.
- Barrier doping
- Internal quantum efficiency (IQE)
- Light emitting diodes (LEDs)
- Multiple quantum well (MQW)