Reduction of efficiency droop in GaN/InGaN based multiple quantum well light emitting diode by varying Si-doping and thickness in barrier layers

Shivesh Anand, Pramila Mahala*, Sumitra Singh, Suchandan Pal

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

3 Citations (Web of Science)

Abstract

In this paper, InGaN/GaN based multiple quantum well blue light emitting diodes have been optimized by varying Si doping concentrations and incorporating step-wise graded thickness in quantum barriers for achieving improved internal quantum efficiency. Optimized Si-doped barrier profile along with graded thickness in quantum barriers shows improved performance of light emitting diodes. The improvement in results may be attributed to the fact that grading made the transportation of holes more homogeneous, which inhibits the electron leakage and enhances the radiative recombination.

Original languageEnglish
Pages (from-to)645-649
Number of pages5
JournalOptik
Volume178
DOIs
Publication statusPublished - 2019

Keywords

  • Barrier doping
  • InGaN/GaN
  • Internal quantum efficiency (IQE)
  • Light emitting diodes (LEDs)
  • Multiple quantum well (MQW)

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