Physicochemical-microstructural approach for modeling the crack passage at topside metallic parts in IGBT semiconductor power electronics

M. Shqair*, Z. Khatir, A. Ibrahim, M. Berkani, A. Halouani, T. Hamieh

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingAcademicpeer-review

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Engineering

Material Science