Physicochemical-microstructural approach for modeling the crack passage at topside metallic parts in IGBT semiconductor power electronics
M. Shqair*, Z. Khatir, A. Ibrahim, M. Berkani, A. Halouani, T. Hamieh
*Corresponding author for this work
Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceeding › Academic › peer-review
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