Physicochemical-microstructural approach for modeling the crack passage at topside metallic parts in IGBT semiconductor power electronics
- M. Shqair*
- , Z. Khatir
- , A. Ibrahim
- , M. Berkani
- , A. Halouani
- , T. Hamieh
*Corresponding author for this work
Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceeding › Academic › peer-review